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| 1 item symbol rating unit drain-source voltage v ds 150 continuous drain current i d 9 pulsed drain current i d(puls] 36 continuous reverse drain current i dr 9 gate-source peak voltage v gs 20 max. power dissipation p d 35 operating and storage t ch +150 temperature range t stg 2SK1088-MR fuji power mosfet n-channel silicon power mosfet equivalent circuit schematic maximum ratings and characteristics absolute maximum ratings ( tc=25c unless otherwise specified) gate(g) source(s) drain(d) v a a a v w c c -55 to +150 jedec eiaj sc-67 outline drawings f- iii series features high current low on-resistance no secondary breakdown low driving power high forward transconductance applications motor controllers general purpose power amplifier dc-dc converters to-220f15 3. source 2.54 electrical characteristics (t c =25c unless otherwise specified) thermal characteristics item symbol test conditions zero gate voltage drain current i dss min. typ. max. units v v a ma na ? s pf ns v ns min. typ. max. units thermal resistance r th(ch-a) channel to ambient r th(ch-c) channel to case 62.5 3.57 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss t d(on) t r t d(off) t f v sd t rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on (t on =t d(on) +t r ) turn-off time t off (t off =t d(off) +t f ) diode forward on-voltage reverse recovery time test conditions i d =1ma v gs =0v i d =1ma v ds =v gs v ds =150v v gs =0v t ch =25c t ch =125c v gs = 20v v ds =0v i d =4.5a v gs =4v i d =4.5a v gs =10v i d =4.5a v ds =25v v ds =25v v gs =0v f=1mhz v cc =30v r g =25 ? i d =9a v gs =10v i f =2xi dr v gs =0v t ch =25c i f =i dr di/dt=100a/ s t ch =25c 150 1.0 1.5 2.5 10 500 0.2 1.0 10 100 0.26 0.40 0.20 0.30 5.0 10.0 900 1200 150 230 40 60 10 15 40 60 150 230 30 45 1.10 1.5 100
2 characteristics 2SK1088-MR fuji power mosfet typical output characteristics 0 2 4 6 8 v ds [ v ] i d [ a ] on state resistance vs. t ch r ds(on) [ ? ] t ch [ c ] typical transfer characteristics v gs [ v ] i d [ a ] typical drain-source on state resistance vs. i d i d [ a ] r ds(on) [ ? ] typical forward transconductance vs. i d i d [ a ] gfs [ s ] gate threshold voltage vs. t ch t ch [ c ] v gs(th) [ v ] -50 0 50 100 150 0 2 4 6 8 -50 0 50 100 150 0 4 8 12 16 16 12 8 4 0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 15 10 5 0 3.0 2.0 1.0 0 16 12 8 4 0 0.8 0.6 0.4 0.2 0 3 fuji power mosfet typical capacitance vs. v ds 0 10 20 30 v ds [ v ] c [nf] typical input charge v ds [ v ] qg [ nc ] forward characteristics of reverse diode 0 0.5 1.0 v sd [ v ] i f [ a ] allowable power dissipation vs. t c 0 50 100 150 t c [ c ] p d [ w ] transient thermal impedance t [ sec. ] r th [c/w] safe operating area i d [ a ] v ds [ v ] v gs [ v ] 0 20 40 60 80 100 120 2SK1088-MR 20 16 12 8 4 0 1 0.5 0.1 0.05 0.01 200 150 100 50 0 10 5 1 0.5 0.1 30 20 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 1 10 0 10 -1 10 -2 50 10 5 1 0.5 5 10 50 100 |
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